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From theoretical simulations, an indirect method entitled `sandwich stacking' has already been suggested for the analysis of the outer atomic layers of thin films. By means of a new suitable deposit (with the same material and the same thickness as the substrate) these outer foreign layers, if any, are embedded within a homogeneous film. When such stackings are analysed by X-rays at grazing reflexion (either specular or diffuse), a change in the interference-pattern contrast appears and provides a quantitative determination of the height distribution of foreign atoms. In this paper, the method is applied first to silver films exposed for a time at room temperature and secondly to multilayer films of the types Au-Cu-Au and Au-Ag-Au, in which the copper and silver layers typically proceed from an epitaxic growth on the gold (111) planes. In such an investigation the roughness of the various interfaces in the stacking must be taken into account and therefore a roughness model has been tested for X-ray specular reflexion from glass substrates (float-glass as delivered, or borosilicate crown glass optically polished) and also from gold or silver films evaporated on a glass substrate in an ultra-high vacuum.

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