Computer simulation of X-ray topographs of stacking faults in silicon

This note reports on high-picture-quality computer-simulation investigation of X-ray topographs of stacking faults in silicon. The dynamical theory of X-ray diffraction including absorption has been used to generate detailed intensity information on section and traverse topographs of a perfect crystal containing an extrinsic stacking fault. An important advantage of the simulation technique is that it permits detailed comparison of the various features of the topographs with experiment.