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Crystals of 7-In2S3, a new modification of indium sulphide, grown by vapour transport, were studied by X-ray topography (Lang technique) and electron microscopy. The most frequent defects are dislocations with Burgers vector of the type b= [100]. Growth layers were also observed. Neither the dissociation of dislocations into partials nor any stacking faults could be detected. γ-In2S3 gradually decomposes in the electron microscope by loss of sulphur. This results in an agglomeration of point defects leading to stacking faults surrounded by dislocation loops with b parallel to [001].