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Silicon carbide is a polar crystal consisting, in all its structural modifications, of identical networks of silicon and carbon atoms mutually displaced along the c axis. Opposite surfaces are formed by either silicon or carbon layers. The sense of the crystallographic polarity may be determined by means of the small X-ray anomalous dispersion effect. In order to minimize the experimental errors a simultaneous reflection technique has been devised using photographic recording. The results are consistent with theory and agree with those given by etching.