The analysis of epitaxic growth layers of silicon carbide by X-ray diffraction topography

The use of X-ray diffraction topography to identify domains of different polytype in crystals of silicon carbide has been described in a previous paper. Further methods have been developed and applied to the analysis of thin films deposited epitaxically from the vapour phase onto basal surfaces of crystals of hexagonal α-SiC. The epitaxic films consist either of α-SiC, or of the cubic form β-SiC, with multiple twinning about the axis normal to the surface. The fine scale texture of interlocking twin domains is readily demonstrated in X-ray diffraction topographs.