The epitaxy of silicon on quartz

Epitaxic films of silicon have been grown chemically on single-crystal quartz substrates by two different heterogeneous reactions: (a) the hydrogen reduction of trichlorosilane and (b) the pyrolysis of silane. The films have been examined by electron and X-ray diffraction and electron microscopy, and measurements have been made of room temperature carrier concentration and mobility. Particular attention has been paid to the determination of epitaxic arrangements, and to the mode of formation of multiply oriented films. An effect relating film thickness to orientation has been observed, and reasons for this are discussed. The effect of the chemical reaction on the final silicon orientation is also considered in some detail. Finally, carrier mobility values have been related both to various defect structures observed in the films and to the presence of multiple orientations.