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An innovative approach towards the physico-chemical tailoring of zinc oxide thin films is reported. The films have been deposited by liquid phase using the sol-gel method and then exposed to hard X-rays, provided by a synchrotron storage ring, for lithography. The use of surfactant and chelating agents in the sol allows easy-to-pattern films made by an organic-inorganic matrix to be deposited. The exposure to hard X-rays strongly affects the nucleation and growth of crystalline ZnO, triggering the formation of two intermediate phases before obtaining a wurtzite-like structure. At the same time, X-ray lithography allows for a fast patterning of the coatings enabling microfabrication for sensing and arrays technology.

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Portable Document Format (PDF) file https://doi.org/10.1107/S1600577514024047/co5056sup1.pdf
FTIR absorption spectra in the 1800-1675 cm-1 range of the as-deposited ZnO films upon exposure to increasing X-ray doses (Fig. S1); Raman spectra in the 1200-80 cm-1 range of as-deposited films as a function of the exposure dose (Fig. S2); XRD patterns at increasing X-ray doses for films treated at 200°C in the 35-99° and 40-53° 2θ range (Fig. S3); optical images of a patterned film before and after treatment at 300°C (Fig. S4).


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