Journal of Applied Crystallography

Volume 29, Part 2 (April 1996)

research papers

J. Appl. Cryst. (1996). 29, 159-163 [ doi:10.1107/S0021889895013434 ]

X-ray Scattering on Stacking Faults in 123 Crystals Considering Local Changes of Distances between Atomic Layers

N. D. Rud and A. I. Ustinov

Abstract: Spatial distribution of X-ray diffusion scattering intensity conditioned by additional CuO atomic layers [stacking faults (SF)] in the AB₂Cu₃O_{7 -x} (123) structure has been studied within a cinematic approach. Natural laws of difffraction-pattern changes caused by increase of SF density and by local changes of interplanar distances of atomic layers in the vicinity of SFs were obtained. The X-ray method for determination of the SF density and local changes of interplanar distances is described.