Journal of Applied Crystallography

Volume 26, Part 4 (August 1993)

short communications

 

A 10⁹ Pa high-pressure cell for X-ray and optical measurements. Erratum

M. Leszczynski, S. Podlasin and T. Suski

Abstract: In the paper by Leszczynski, Podlasin & Suski [J. Appl. Cryst. (1993), 26, 1-4], the value of the GaAs bulk modulus B₀ = 1.1 (0.2) × 10¹¹ Pa cited from the paper by Besson, ltie, Polian, Weill, Manssot & Gonzalez [Phys. Rev. B (1991), 44, 4214-4234] was misread from the figure. The correct value, as given by Itie [Phase Transit. (1992), 39, 81], is B₀ = 0.85 × 10¹¹ Pa and B' = 4.5 in a Murnaghan equation of state.

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