Journal of Applied Crystallography

Volume 41, Part 3 (June 2008)

research papers

 

Imaging of interstitial atoms in Ga_1-xMn_xAs layers by means of X-ray diffuse scattering

M. Kopecký, E. Busetto, A. Lausi, Z. Sourek, J. Kub, M. Cukr, V. Novák, K. Olejník and J. P. Wright

Abstract: The local atomic structure of a Ga_1-xMn_xAs (x = 0.07) layer during the annealing process was studied by means of X-ray diffuse scattering. The difference between the pair-distribution functions before and after annealing indicated the fraction of atoms that changed concentration and identified them to be exclusively interstitial atoms at the centres of gallium and/or arsenic tetrahedra in the GaMnAs unit cell.

Keywords: GaMnAs layers; X-ray diffuse scattering; annealing.

Copyright © International Union of Crystallography
IUCr Webmaster