J. Appl. Cryst. (2006). 39, 652-655 [ doi:10.1107/S0021889806025696 ]
Abstract: A new approach is proposed for X-ray dynamical diffraction theory in distorted crystals. The theory allows one to perform dynamical diffraction simulations between Bragg peaks for non-ideal crystals, using a simple approach of two distorted waves. It can be directly applied for reciprocal-space simulation. The formalism is used to analyse high-resolution X-ray diffraction data, obtained for an InSb/InGaSb/InSb/InAs superlattice grown on top of a GaSb buffer layer on a (001) GaSb substrate.
Keywords: X-ray dynamical diffraction theory; distorted crystals; epitaxic layers; films; multilayer semiconductor.
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