Journal of Applied Crystallography

Volume 37, Part 4 (August 2004)

research papers

J. Appl. Cryst. (2004). 37, 585-588 [ doi:10.1107/S0021889804011501 ]

X-ray interferometric method for investigation of deformation fields caused in interferometer blocks by implanted ions

H. R. Drmeyan

Abstract: Lateral deformations caused by argon ions with energy 180 keV implanted in silicon are investigated by the X-ray interferometric method. By means of interferometric topograms, relative deformations and integral stresses are determined depending on radiation dose. Maximum local stresses are assessed to be [sigma] _x(max) = 8.4 × 10⁷ N m^-2 and [sigma] _y(max) = 6.7 × 10⁷ N m^-2.

Keywords: interferometry; deformation fields; ion implantation.